RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB

Samsung M471B5273DH0-CH9 4GB vs Patriot Memory (PDP Systems) PSD34G13332S 4GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
  • 更快的读取速度，GB/s
    9.3 left arrow 8.4
    测试中的平均数值
Patriot Memory (PDP Systems) PSD34G13332S 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 47
    左右 -31% 更低的延时

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    47 left arrow 36
  • 读取速度，GB/s
    9.3 left arrow 8.4
  • 写入速度，GB/s
    5.9 left arrow 5.9
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 1435

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 76.C102G.D170B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C14-8GTZNB 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2K4400C19 8GB
Corsair CMK16GX4M2K4400C19 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CMK16GX4M2K4500C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston HP24D4U7S8MH-8 8GB
Kingston HP24D4U7S8MH-8 8GB
内存RAM