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SK Hynix DDR2 800 2G 2GB
Corsair CMD8GX4M2B3466C18 4GB
比较
SK Hynix DDR2 800 2G 2GB vs Corsair CMD8GX4M2B3466C18 4GB
总分
SK Hynix DDR2 800 2G 2GB
总分
Corsair CMD8GX4M2B3466C18 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
更快的读取速度,GB/s
2
19
测试中的平均数值
需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB
报告一个错误
低于PassMark测试中的延时,ns
20
77
左右 -285% 更低的延时
更快的写入速度,GB/s
15.3
1,884.0
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Corsair CMD8GX4M2B3466C18 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
20
读取速度,GB/s
2,936.9
19.0
写入速度,GB/s
1,884.0
15.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
564
2939
SK Hynix DDR2 800 2G 2GB RAM的比较
Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB
Corsair CMD8GX4M2B3466C18 4GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393A1G40DB0-CPB 8GB
Essencore Limited KD48GU880-32A160T 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMT16GX4M2K4266C19 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M4C3200C14C 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX2400C14S4/16G 16GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL18-20-20 D4-3600 8GB
SK Hynix DDR2 800 2G 2GB
Corsair CMD8GX4M2B3466C18 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
A-DATA Technology DQVE1908 512MB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMD8GX4M2B3000C15 4GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Crucial Technology CT102464BA160B.M16 8GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
报告一个错误
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Bug description
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