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比较
DDR2 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
301
RAM
Samsung M395T5160QZ4-CE76 4GB
Latency
48
Read speed
3,418.2
Write speed
2,581.1
№
302
RAM
Apacer Technology 78.01G92. 1GB
Latency
48
Read speed
3,118.2
Write speed
1,449.2
№
303
RAM
Kingston 16HTF51264HZ-800C1 4GB
Latency
48
Read speed
5,422.0
Write speed
2,134.5
№
304
RAM
Apacer Technology 78.A1GA0.9LM 2GB
Latency
48
Read speed
5,242.2
Write speed
2,546.3
№
305
RAM
Kingston TCM633-QAC 1GB
Latency
48
Read speed
5,249.2
Write speed
2,284.5
№
306
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-S6 2GB
Latency
48
Read speed
5,347.9
Write speed
2,374.7
№
307
RAM
Kingston 99U5315-020.A00LF 512MB
Latency
48
Read speed
4,187.1
Write speed
2,013.2
№
308
RAM
Transcend Information TS256MLQ64V5U 2GB
Latency
48
Read speed
3,315.5
Write speed
1,445.9
№
309
RAM
Transcend Information TS256MLQ64V8P 2GB
Latency
48
Read speed
5,509.9
Write speed
2,201.8
№
310
RAM
Apacer Technology 78.AAGA0.9L4 2GB
Latency
48
Read speed
5,124.4
Write speed
2,426.6
№
311
RAM
OCZ OCZ2RPR10661G 1GB
Latency
48
Read speed
5,545.5
Write speed
2,536.1
№
312
RAM
Kingston 99U5315-045.A00LF 1GB
Latency
48
Read speed
5,037.3
Write speed
2,241.1
№
313
RAM
Mushkin 991558+(996558+) 2GB
Latency
48
Read speed
5,408.8
Write speed
2,202.6
№
314
RAM
Transcend Information TX1066QLU-2GK 1GB
Latency
48
Read speed
5,599.5
Write speed
2,493.4
№
315
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64BP8-S5 1GB
Latency
48
Read speed
4,756.8
Write speed
2,183.9
№
316
RAM
Kreton Corporation 515236225641452900 1GB
Latency
48
Read speed
4,345.7
Write speed
2,096.3
№
317
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72BP8-Y5 1GB
Latency
48
Read speed
4,647.6
Write speed
1,763.7
№
318
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72CP8-S6 1GB
Latency
48
Read speed
4,965.9
Write speed
2,099.1
№
319
RAM
TwinMOS 8DRP5MK8-TATP 2GB
Latency
48
Read speed
4,739.3
Write speed
2,002.5
№
320
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72P8-C4 1GB
Latency
48
Read speed
4,275.7
Write speed
2,010.1
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最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZRC 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
SpecTek Incorporated ?????????????????? 2GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston ACR32D4U2S8ME-16 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 99U5665-004.A00G 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2800C15-16GVR 16GB
Micron Technology 99U5403-159.A01LF 8GB
Kingston 9905702-029.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMWX16GC3200C16W4 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Kingston KHX3200C18D4/8G 8GB
Kingston 9905678-065.A00G 8GB
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