RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR4 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
381
RAM
Kingmax Semiconductor GLLG42F-18---------- 8GB
Latency
23
Read speed
14.6
Write speed
7.2
№
382
RAM
Micron Technology 16GB 2133MHz DIMM 16GB
Latency
23
Read speed
17.3
Write speed
13.2
№
383
RAM
Crucial Technology 8G4US2400.M8B1 8GB
Latency
23
Read speed
17.1
Write speed
12.2
№
384
RAM
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Latency
23
Read speed
16.0
Write speed
9.2
№
385
RAM
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Latency
23
Read speed
18.1
Write speed
15.0
№
386
RAM
Avant Technology J641GU42J7240N3 8GB
Latency
23
Read speed
16.7
Write speed
12.1
№
387
RAM
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Latency
23
Read speed
17.2
Write speed
13.1
№
388
RAM
Patriot Memory (PDP Systems) PSD44G213382 4GB
Latency
23
Read speed
17.7
Write speed
13.8
№
389
RAM
Patriot Memory (PDP Systems) PSD44G240081 4GB
Latency
23
Read speed
15.9
Write speed
11.7
№
390
RAM
G Skill Intl F4-2400C16-4GRS 4GB
Latency
23
Read speed
16.6
Write speed
12.6
№
391
RAM
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Latency
23
Read speed
15.9
Write speed
13.6
№
392
RAM
Transcend Information TS1GLH64V4H 8GB
Latency
23
Read speed
17.3
Write speed
13.8
№
393
RAM
Kingmax Semiconductor GSAG42F-18---------- 8GB
Latency
23
Read speed
15.5
Write speed
12.2
№
394
RAM
G Skill Intl F4-2400C16-8GIS 8GB
Latency
23
Read speed
16.3
Write speed
11.1
№
395
RAM
SK Hynix GKE800UD102408-2133 8GB
Latency
23
Read speed
17.2
Write speed
12.0
№
396
RAM
Transcend Information TS2GSH64V6B 16GB
Latency
23
Read speed
16.4
Write speed
14.4
№
397
RAM
Transcend Information TS512MLH64V1H 4GB
Latency
23
Read speed
16.4
Write speed
11.7
№
398
RAM
G Skill Intl F4-2400C17-4GNT 4GB
Latency
23
Read speed
18.1
Write speed
13.8
№
399
RAM
Patriot Memory (PDP Systems) PSD48G240082 8GB
Latency
23
Read speed
17.0
Write speed
11.5
№
400
RAM
Transcend Information TS512MLH64V4H 4GB
Latency
23
Read speed
16.6
Write speed
13.0
«
17
18
19
20
21
22
»
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-8GSXFB 8GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMK32GX4M4C3400C16 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Kingston KP4T2F-PSB 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA82GR7AFR4N-TF 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M2B3733C17 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
×
Bug description
Source link