RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43BB2-CRC 8GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A1K43BB2-CRC 8GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Samsung M378A1K43BB2-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
Faster reading speed, GB/s
3
14.7
Average value in the tests
Reasons to consider
Samsung M378A1K43BB2-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
62
Around -72% lower latency
Faster write speed, GB/s
10.0
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43BB2-CRC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
36
Read speed, GB/s
3,556.6
14.7
Write speed, GB/s
1,843.6
10.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
542
2490
Hexon Technology Pte Ltd HEXON 1GB RAM comparisons
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Samsung M378A1K43BB2-CRC 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43BB2-CRC 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A2K43EB1-CWE 16GB
Corsair CMV4GX3M1B1600C11 4GB
DSL Memory CIR-W4SUSS2408G 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Transcend Information TS2GLH64V4B 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGNT.AR40B 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9905734-061.A00G 32GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston KCDT82-MIE 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMW32GX4M4A2666C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK8GX4M2A2666C16 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston HP26D4U9D8HC-16X 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4400C19-16GTZR 16GB
Report a bug
×
Bug description
Source link