RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
G Skill Intl F4-3466C18-8GTZRXB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3466C18-8GTZRXB 8GB
Report a bug
Below the latency in the PassMark tests, ns
17
28
Around -65% lower latency
Faster reading speed, GB/s
20.9
12.4
Average value in the tests
Faster write speed, GB/s
16.0
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
17
Read speed, GB/s
12.4
20.9
Write speed, GB/s
9.6
16.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2329
3550
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3466C18-8GTZRXB 8GB
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Samsung M471B5673FH0-CF8 2GB
Panram International Corporation D4U2666P-8G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Patriot Memory (PDP Systems) PSD34G133381 4GB
Kingston 9965525-155.A00LF 8GB
Micron Technology AFLD44EK2P 4GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMR16GX4M2Z2933C16 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M378A4G43AB2-CWE 32GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3733C17-16GTZR 16GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.BAGN8.AZC0B 4GB
A-DATA Technology DQVE1908 512MB
Kingston HP32D4U8D8HC-16X 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston HP26D4U9D8ME-16X 16GB
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Panram International Corporation R748G2133U2S 8GB
Report a bug
×
Bug description
Source link