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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73DB0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B1G73DB0-YK0 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Overall score
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 45
    Around 36% lower latency
  • Faster reading speed, GB/s
    12 left arrow 11.9
    Average value in the tests
Samsung M471B1G73DB0-YK0 8GB Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73DB0-YK0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 45
  • Read speed, GB/s
    12.0 left arrow 11.9
  • Write speed, GB/s
    8.1 left arrow 8.1
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2171 left arrow 2077

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB RAM comparisons

Samsung M471B5273DH0-CH9 4GB

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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