Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M393A1G40EB1-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M393A1G40EB1-CPB 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Overall score
star star star star star
Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

Differences

  • Below the latency in the PassMark tests, ns
    46 left arrow 62
    Around -35% lower latency
  • Faster reading speed, GB/s
    11 left arrow 7.4
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 5.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M393A1G40EB1-CPB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 46
  • Read speed, GB/s
    7.4 left arrow 11.0
  • Write speed, GB/s
    5.9 left arrow 8.7
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1612 left arrow 2481
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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