RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston K821PJ-MID 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Compare
Kingston K821PJ-MID 16GB vs Micron Technology 16ATF2G64AZ-2G1A1 16GB
Overall score
Kingston K821PJ-MID 16GB
Overall score
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston K821PJ-MID 16GB
Report a bug
Faster write speed, GB/s
10.3
10.2
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
41
Around -24% lower latency
Faster reading speed, GB/s
14.9
12.7
Average value in the tests
Specifications
Complete list of technical specifications
Kingston K821PJ-MID 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
41
33
Read speed, GB/s
12.7
14.9
Write speed, GB/s
10.3
10.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2338
2800
Kingston K821PJ-MID 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Kingston RB24D4U7S8MB-8 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BLS4G4D240FSA.M8F 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston 9905663-008.A00G 16GB
AMD R5316G1609U2K 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
SpecTek Incorporated ?????????????????? 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4800C18-8GTRS 8GB
AMD R744G2400U1S 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR26D4U9S8ME-8 8GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix GKE160UD102408-2400 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston K1CXP8-MIE 16GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMR16GX4M2C3600C18 8GB
Report a bug
×
Bug description
Source link