RAM comparison Micron Technology 4ATF51264HZ-2G3E1 4GB vs Samsung M471A5244CB0-CWE 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB vs Samsung M471A5244CB0-CWE 4GB

Overall score

Micron Technology 4ATF51264HZ-2G3E1 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Micron Technology 4ATF51264HZ-2G3E1 4GB

Reasons to consider
Samsung M471A5244CB0-CWE 4GB

Faster reading speed, GB/s

15.5 14.8

Average value in the tests
Faster write speed, GB/s

12.0 10.2

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33 higher bandwidth

Complete list of technical specifications

Micron Technology 4ATF51264HZ-2G3E1 4GB

Samsung M471A5244CB0-CWE 4GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2173 2283

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns