RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
10.6
Average value in the tests
Faster write speed, GB/s
11.8
8.8
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Report a bug
Below the latency in the PassMark tests, ns
44
51
Around -16% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
44
Read speed, GB/s
15.6
10.6
Write speed, GB/s
11.8
8.8
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
2374
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
Kingston 99U5595-005.A00LF 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Mushkin 991988 (996988) 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Corsair CML8GX3M2A1866C9 4GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Heoriady M471A1K43CB1-CTD 8GB
Samsung M3 78T2863QZS-CF7 1GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Heoriady M471A1K43CB1-CTD 8GB
Kingston 99U5471-052.A00LF 8GB
Samsung M378A4G43AB2-CVF 32GB
SK Hynix HYMP164U64CP6-Y5 512MB
Transcend Information JM2666HSB-8G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905700-013.A00G 8GB
Report a bug
×
Bug description
Source link