RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Compare
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Overall score
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
37
Around -37% lower latency
Faster reading speed, GB/s
15.2
13.9
Average value in the tests
Faster write speed, GB/s
10.2
8.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
27
Read speed, GB/s
13.9
15.2
Write speed, GB/s
8.6
10.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2395
2764
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB RAM comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KF560C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Avant Technology F641GU67F9333G 8GB
Kingston HP32D4U2S1ME-8 8GB
Samsung DDR3 8GB 1600MHz 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4000C18-32GTZN 32GB
Kingston 9965662-016.A00G 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Kingston 9905403-515.A00LF 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kllisre M471A3243BB0-CP50 16GB
Report a bug
×
Bug description
Source link