RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C16-16GVS 16GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3200C16-16GVS 16GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
G Skill Intl F4-3200C16-16GVS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
17.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-16GVS 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
92
Around -241% lower latency
Faster write speed, GB/s
14.8
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C16-16GVS 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
27
Read speed, GB/s
2,105.4
17.5
Write speed, GB/s
1,266.1
14.8
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
339
3693
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
G Skill Intl F4-3200C16-16GVS 16GB RAM comparisons
Kingston 9905403-061.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C16-16GVS 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD16GX4M4B3200C16 4GB
Samsung M378B1G73EB0-CK0 8GB
Kingston KHX2133C14/8G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMU32GX4M4A2666C16 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK256GX4M8A2400C16 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Terabyte Co Ltd RCX2-16G3600A 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMSX16GX4M2A3000C18 8GB
Kingston 99U5474-028.A00LF 4GB
SK Hynix HMA41GU7AFR8N-TF 8GB
Kingston KHX318C10FR/8G 8GB
Kingston 9905678-041.A00G 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB
Report a bug
×
Bug description
Source link