RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
17.3
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Report a bug
Below the latency in the PassMark tests, ns
59
92
Around -56% lower latency
Faster write speed, GB/s
7.6
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
59
Read speed, GB/s
2,105.4
17.3
Write speed, GB/s
1,266.1
7.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
339
1954
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905624-045.A00G 8GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M378A2G43BB3-CWE 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-3000C14-16GVRD 16GB
Kingston KP4T2F-PSB 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3600C16-8GVK 8GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK64GX4M2C3200C16 32GB
Panram International Corporation W4U2400PS-4G 4GB
Corsair CMD32GX4M4A2666C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Teclast TLD416G26A30 16GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Report a bug
×
Bug description
Source link