RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
42
Around -45% lower latency
Faster reading speed, GB/s
12.2
9.7
Average value in the tests
Faster write speed, GB/s
9.6
6.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
29
Read speed, GB/s
9.7
12.2
Write speed, GB/s
6.0
9.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1396
2443
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M391B5673FH0-CH9 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CM4X8GE2666C16K8 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M2C3333C16 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965604-001.D00G 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ASU21D4U5S1MB-4 4GB
Kingston 99P5474-014.A00LF 4GB
Kingston KHX2666C13D4/8GX 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMW32GX4M2C3466C16 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
Samsung M378T5663QZ3-CF7 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Report a bug
×
Bug description
Source link