RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Kingston MSI26D4S9S8ME-8 8GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs Kingston MSI26D4S9S8ME-8 8GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
Kingston MSI26D4S9S8ME-8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.8
Average value in the tests
Reasons to consider
Kingston MSI26D4S9S8ME-8 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
58
Around -61% lower latency
Faster write speed, GB/s
12.6
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
Kingston MSI26D4S9S8ME-8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
36
Read speed, GB/s
4,241.0
15.8
Write speed, GB/s
1,950.7
12.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
651
2835
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Kingston MSI26D4S9S8ME-8 8GB RAM comparisons
AMD R5316G1609U2K 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-3200C15-8GVR 8GB
PNY Electronics PNY 2GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CM4X4GF2400C16N2 4GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK128GX4M4A2666C16 32GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Samsung DDR3 8GB 1600MHz 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston MSI26D4S9S8ME-8 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905700-046.A00G 16GB
Samsung 1600 CL10 Series 8GB
Kingston XJV223-MIE 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.C2GFA.AF30B 8GB
Qimonda 72T128420EFA3SB2 1GB
SK Hynix HMA82GS6AFRFR-UH 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD44G213381 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Report a bug
×
Bug description
Source link