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Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Overall score
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 17.5
    Average value in the tests
Patriot Memory (PDP Systems) 3600 C17 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 46
    Around -39% lower latency
  • Faster write speed, GB/s
    15.8 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 3200
    Around 5.31 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 33
  • Read speed, GB/s
    2,909.8 left arrow 17.5
  • Write speed, GB/s
    1,519.2 left arrow 15.8
  • Memory bandwidth, mbps
    3200 left arrow 17000
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 3482

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