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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Micron Technology 8ATF51264AZ-2G1A2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
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Faster reading speed, GB/s
4
15.8
Average value in the tests
Faster write speed, GB/s
2,168.2
11.0
Average value in the tests
Reasons to consider
Micron Technology 8ATF51264AZ-2G1A2 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
60
Around -67% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
36
Read speed, GB/s
4,595.2
15.8
Write speed, GB/s
2,168.2
11.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
941
2417
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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