RAM comparison Samsung M378A5244CB0-CTD 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Samsung M378A5244CB0-CTD 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Overall score

Samsung M378A5244CB0-CTD 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A5244CB0-CTD 4GB

Below the latency in the PassMark tests, ns

36 73

Around 51% lower latency
Faster reading speed, GB/s

15.8 15.1

Average value in the tests
Faster write speed, GB/s

11.8 7.9

Average value in the tests
Higher memory bandwidth, mbps

21300 19200

Around 1.11% higher bandwidth

Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Complete list of technical specifications

Samsung M378A5244CB0-CTD 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2497 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns