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Samsung M393A1K43BB1-CTD 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Compare
Samsung M393A1K43BB1-CTD 8GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB
Overall score
Samsung M393A1K43BB1-CTD 8GB
Overall score
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393A1K43BB1-CTD 8GB
Report a bug
Reasons to consider
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Report a bug
Below the latency in the PassMark tests, ns
54
61
Around -13% lower latency
Faster reading speed, GB/s
10.4
8.2
Average value in the tests
Faster write speed, GB/s
8.2
6.4
Average value in the tests
Higher memory bandwidth, mbps
23400
21300
Around 1.1 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393A1K43BB1-CTD 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
61
54
Read speed, GB/s
8.2
10.4
Write speed, GB/s
6.4
8.2
Memory bandwidth, mbps
21300
23400
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
1813
2259
Samsung M393A1K43BB1-CTD 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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