RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Panram International Corporation D4N2666PS-16G 16GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Panram International Corporation D4N2666PS-16G 16GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Panram International Corporation D4N2666PS-16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Panram International Corporation D4N2666PS-16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
49
Around -88% lower latency
Faster reading speed, GB/s
17.2
10.2
Average value in the tests
Faster write speed, GB/s
15.4
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Panram International Corporation D4N2666PS-16G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
26
Read speed, GB/s
10.2
17.2
Write speed, GB/s
8.1
15.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2465
3617
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Panram International Corporation D4N2666PS-16G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-017.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
ASint Technology SSZ2128M8-JGE1F 2GB
Corsair CMT64GX4M8X3600C18 8GB
Samsung M393B1G70BH0-YK0 8GB
Panram International Corporation D4N2666PS-16G 16GB
Samsung M3 78T2863QZS-CF7 1GB
Kllisre M471A3243BB0-CP50 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3866C18-8GTZR 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3600C16-8GTRG 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2800C17-8GVR 8GB
Samsung M378B1G73EB0-CK0 8GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Kingston KN2M64-ETB 8GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
SK Hynix HMT451U7BFR8C-RD 4GB
Corsair CM4X16GE2666C18S2 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-2133C15-4GVK 4GB
Samsung M471B5273DH0-CK0 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
×
Bug description
Source link