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Samsung M393B2G70BH0-CH9 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Samsung M393B2G70BH0-CH9 16GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Overall score
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Overall score
star star star star star
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Differences Specifications Comments

Differences

Samsung M393B2G70BH0-CH9 16GB Reasons to consider
Samsung M393B2G70BH0-CH9 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 51
    Around 35% lower latency
Micron Technology 18ASF1G72PDZ-2G1A1 8GB Reasons to consider
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Report a bug
  • Faster reading speed, GB/s
    10.9 left arrow 8
    Average value in the tests
  • Faster write speed, GB/s
    8.3 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 51
  • Read speed, GB/s
    8.0 left arrow 10.9
  • Write speed, GB/s
    7.3 left arrow 8.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1911 left arrow 2286

Samsung M393B2G70BH0-CH9 16GB RAM comparisons

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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