RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2800C16-4GVR 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-2800C16-4GVR 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
G Skill Intl F4-2800C16-4GVR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
15.9
Average value in the tests
Reasons to consider
G Skill Intl F4-2800C16-4GVR 4GB
Report a bug
Below the latency in the PassMark tests, ns
67
104
Around -55% lower latency
Faster write speed, GB/s
8.3
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2800C16-4GVR 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
67
Read speed, GB/s
3,192.0
15.9
Write speed, GB/s
2,404.5
8.3
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
1850
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-2800C16-4GVR 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2800C16-4GVR 4GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Kingston 99U5458-008.A00LF 4GB
Kingston 9905663-012.A00G 16GB
Strontium EVMT8G1600U86S 8GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK32GX4M4K3600C16 8GB
Kingston KHX16LC9/8GX 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology GD2.1527WC.001 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9965640-035.C00G 32GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905630-052.A00G 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Report a bug
×
Bug description
Source link