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Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA82GU6DJR8N-WM 16GB

Samsung M395T2863QZ4-CF76 1GB vs SK Hynix HMA82GU6DJR8N-WM 16GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.7
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 10.7
    Average value in the tests
SK Hynix HMA82GU6DJR8N-WM 16GB Reasons to consider
SK Hynix HMA82GU6DJR8N-WM 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 104
    Around -247% lower latency
  • Higher memory bandwidth, mbps
    23400 left arrow 6400
    Around 3.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 30
  • Read speed, GB/s
    3,192.0 left arrow 14.7
  • Write speed, GB/s
    2,404.5 left arrow 10.7
  • Memory bandwidth, mbps
    6400 left arrow 23400
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    no data left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 2935

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

SK Hynix HMA82GU6DJR8N-WM 16GB RAM comparisons

TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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