RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Essencore Limited IM44GU48N28-GGGHM 4GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Essencore Limited IM44GU48N28-GGGHM 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
67
Around 43% lower latency
Faster write speed, GB/s
12.0
8.3
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Essencore Limited IM44GU48N28-GGGHM 4GB
Report a bug
Faster reading speed, GB/s
16.5
15.5
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
67
Read speed, GB/s
15.5
16.5
Write speed, GB/s
12.0
8.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
1876
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston 39P5429-006.AO01 2GB
Mushkin MR[ABC]4U266GHHF8G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Panram International Corporation W4U2133PS-8G 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston 9905625-075.A00G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Kingston KHX1600C9D3/4GX 4GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Corsair CMK16GX4M2D3600C18 8GB
Corsair CMN16GX4M2Z3200C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
SK Hynix HYMP112S64CP6-S6 1GB
AMD R748G2606U2S 8GB
Elpida EBE10UE8AFSA-8G-F 1GB
G Skill Intl F4-2133C15-8GFT 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Report a bug
×
Bug description
Source link