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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Faster write speed, GB/s
13.6
11.9
Average value in the tests
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
46
Around -18% lower latency
Faster reading speed, GB/s
16.1
14.2
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
39
Read speed, GB/s
14.2
16.1
Write speed, GB/s
13.6
11.9
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2717
2782
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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