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SK Hynix DDR2 800 2G 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

SK Hynix DDR2 800 2G 2GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Overall score
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Overall score
star star star star star
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Differences Specifications Comments

Differences

SK Hynix DDR2 800 2G 2GB Reasons to consider
SK Hynix DDR2 800 2G 2GB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 18
    Average value in the tests
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB Reasons to consider
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 77
    Around -185% lower latency
  • Faster write speed, GB/s
    15.1 left arrow 1,884.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 27
  • Read speed, GB/s
    2,936.9 left arrow 18.0
  • Write speed, GB/s
    1,884.0 left arrow 15.1
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    564 left arrow 3711

SK Hynix DDR2 800 2G 2GB RAM comparisons

Samsung M378T5663QZ3-CF7 2GB
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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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