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TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

Overall score
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Overall score
star star star star star
Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Differences Specifications Comments

Differences

TwinMOS 8DHE3MN8-HATP 2GB Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
  • Faster write speed, GB/s
    870.4 left arrow 6.8
    Average value in the tests
Micron Technology 9ASF51272PZ-2G1AX 4GB Reasons to consider
Micron Technology 9ASF51272PZ-2G1AX 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 87
    Around -123% lower latency
  • Faster reading speed, GB/s
    7.7 left arrow 3
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    87 left arrow 39
  • Read speed, GB/s
    3,155.6 left arrow 7.7
  • Write speed, GB/s
    870.4 left arrow 6.8
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    417 left arrow 1768

TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons

takeMS International AG TMS1GB264D083805EV 1GB
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Micron Technology 9ASF51272PZ-2G1AX 4GB RAM comparisons

Crucial Technology CT2K102464BD160B 8GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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