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TwinMOS 8DHE3MN8-HATP 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs V-Color Technology Inc. TN48G26S819-SB 8GB

Overall score
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Overall score
star star star star star
V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

Differences Specifications Comments

Differences

TwinMOS 8DHE3MN8-HATP 2GB Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.8
    Average value in the tests
  • Faster write speed, GB/s
    870.4 left arrow 13.6
    Average value in the tests
V-Color Technology Inc. TN48G26S819-SB 8GB Reasons to consider
V-Color Technology Inc. TN48G26S819-SB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 87
    Around -248% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    87 left arrow 25
  • Read speed, GB/s
    3,155.6 left arrow 16.8
  • Write speed, GB/s
    870.4 left arrow 13.6
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    417 left arrow 2889

TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

V-Color Technology Inc. TN48G26S819-SB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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