TwinMOS 8DPT5MK8-TATP 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Overall score

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Overall score

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Differences Specifications Comments

Differences

TwinMOS 8DPT5MK8-TATP 2GB

Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB

Faster reading speed, GB/s

3 20.5

Average value in the tests

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Below the latency in the PassMark tests, ns

18 53

Around -194% lower latency
Faster write speed, GB/s

16.2 1,590.1

Average value in the tests
Higher memory bandwidth, mbps

19200 6400

Around 3 higher bandwidth

Specifications

Complete list of technical specifications

TwinMOS 8DPT5MK8-TATP 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

53 18
Read speed, GB/s

3,726.4 20.5
Write speed, GB/s

1,590.1 16.2
Memory bandwidth, mbps

6400 19200

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

522 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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