RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
34
Around 24% lower latency
Reasons to consider
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
Faster reading speed, GB/s
20.3
13.2
Average value in the tests
Faster write speed, GB/s
13.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
34
Read speed, GB/s
13.2
20.3
Write speed, GB/s
8.4
13.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2070
3343
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5773DH0-CH9 2GB
Corsair CM4B8G2J2400A14K 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston ACR26D4U9S1KA-4 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3866C18-4GTZ 4GB
Corsair VSA2GSDS667C4 2GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965669-008.A03G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965643-006.A01G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMW16GX4M2D3600C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905624-016.A00G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMU32GX4M2C3200C16 16GB
Report a bug
×
Bug description
Source link