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Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Hexon Technology Pte Ltd HEXON 1GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Differences Specifications Comments

Differences

Hexon Technology Pte Ltd HEXON 1GB Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.5
    Average value in the tests
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 62
    Around -100% lower latency
  • Faster write speed, GB/s
    15.5 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 31
  • Read speed, GB/s
    3,556.6 left arrow 20.5
  • Write speed, GB/s
    1,843.6 left arrow 15.5
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 3649

Hexon Technology Pte Ltd HEXON 1GB RAM comparisons

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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