RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Below the latency in the PassMark tests, ns

28 29

Around -4% lower latency
Faster reading speed, GB/s

18.1 12.1

Average value in the tests
Faster write speed, GB/s

14.8 7.8

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Main characteristics

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2177 3564

RAM Latency Calculator

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RAM 1

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Absolute Latency

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RAM 2

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