RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs A-DATA Technology AO1P24HC8T1-BSFS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
62
Around -88% lower latency
Faster reading speed, GB/s
14.5
7.4
Average value in the tests
Faster write speed, GB/s
9.1
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
33
Read speed, GB/s
7.4
14.5
Write speed, GB/s
5.9
9.1
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1612
2383
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
Samsung M378A4G43AB2-CVF 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8266.C16FE 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Essencore Limited KD48GU880-36A180Z 8GB
Mushkin 991586 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905702-204.A00G 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2400C15-16GTZR 16GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5712-009.A00G 16GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M393A2K40BB1-CRC 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-2800C16-8GRK 8GB
Mushkin 991586 2GB
Panram International Corporation PUD42400C168GVS 8GB
Report a bug
×
Bug description
Source link