RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C18-16GTRG 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3600C18-16GTRG 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C18-16GTRG 16GB
Report a bug
Faster reading speed, GB/s
18
16
Average value in the tests
Faster write speed, GB/s
16.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.0
Write speed, GB/s
12.5
16.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3889
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C18-16GTRG 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston KHX2133C14/16G 16GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Samsung M4 70T5663QZ3-CF7 2GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Essencore Limited KD48GU880-34A170X 8GB
A-DATA Technology DDR4 2400 16GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMK16GX4M2K4333C19 8GB
Mushkin 996902 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
A-DATA Technology DQKD1A08 1GB
Kingston K821PJ-MID 16GB
Report a bug
×
Bug description
Source link