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Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M378A1K43DB2-CTD 8GB

Micron Technology 4ATF51264AZ-2G6E1 4GB vs Samsung M378A1K43DB2-CTD 8GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Overall score
star star star star star
Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Differences Specifications Comments

Differences

Micron Technology 4ATF51264AZ-2G6E1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-2G6E1 4GB
Report a bug
  • Faster reading speed, GB/s
    16.4 left arrow 16
    Average value in the tests
Samsung M378A1K43DB2-CTD 8GB Reasons to consider
Samsung M378A1K43DB2-CTD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 34
    Around -3% lower latency

Specifications

Complete list of technical specifications
Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M378A1K43DB2-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    34 left arrow 33
  • Read speed, GB/s
    16.4 left arrow 16.0
  • Write speed, GB/s
    12.1 left arrow 12.1
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2616 left arrow 2947

Micron Technology 4ATF51264AZ-2G6E1 4GB RAM comparisons

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Samsung M378A1K43DB2-CTD 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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