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Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung 9905599-020.A00G 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung 9905599-020.A00G 16GB

Overall score
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Overall score
star star star star star
Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

Differences Specifications Comments

Differences

Nanya Technology NT512T64U88B0BY-3C 512MB Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 15.6
    Average value in the tests
Samsung 9905599-020.A00G 16GB Reasons to consider
Samsung 9905599-020.A00G 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 71
    Around -173% lower latency
  • Faster write speed, GB/s
    13.2 left arrow 1,322.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung 9905599-020.A00G 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    71 left arrow 26
  • Read speed, GB/s
    2,831.6 left arrow 15.6
  • Write speed, GB/s
    1,322.6 left arrow 13.2
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    399 left arrow 2783

Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Samsung 9905599-020.A00G 16GB RAM comparisons

Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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