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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
AMD R744G2400U1S-UO 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs AMD R744G2400U1S-UO 4GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

Differences Specifications Comments

Differences

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 66
    Around 47% lower latency
  • Faster write speed, GB/s
    9.6 left arrow 8.5
    Average value in the tests
AMD R744G2400U1S-UO 4GB Reasons to consider
AMD R744G2400U1S-UO 4GB
Report a bug
  • Faster reading speed, GB/s
    16.7 left arrow 13.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
AMD R744G2400U1S-UO 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 66
  • Read speed, GB/s
    13.7 left arrow 16.7
  • Write speed, GB/s
    9.6 left arrow 8.5
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 1912

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons

SK Hynix HMT351R7EFR8C-RD 4GB
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AMD R744G2400U1S-UO 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
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