RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GVK 4GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C16-4GVK 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3200C16-4GVK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Reasons to consider
G Skill Intl F4-3200C16-4GVK 4GB
Report a bug
Faster reading speed, GB/s
17.5
16.1
Average value in the tests
Faster write speed, GB/s
13.7
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GVK 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
16.1
17.5
Write speed, GB/s
10.1
13.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2929
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GVK 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5403-465.A00LF 8GB
Corsair CMD64GX4M8B3200C16 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-2400C15-8GVS 8GB
Kingston 99U5474-023.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GVK 4GB
Peak Electronics 256X64M-67E 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMK16GX4M2Z2400C16 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Kingston 9905471-001.A01LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Kingston 99U5584-001.A00LF 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
PUSKILL DDR3 1600 8G 8GB
Corsair CMSX64GX4M4A2400C16 16GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
Report a bug
×
Bug description
Source link