Samsung DDR3 8GB 1600MHz 8GB
Hyundai Inc GR26C16S8K2HU416 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Hyundai Inc GR26C16S8K2HU416 8GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

Differences

  • Below the latency in the PassMark tests, ns
    22 left arrow 43
    Around -95% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    13.6 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 22
  • Read speed, GB/s
    14.9 left arrow 17.4
  • Write speed, GB/s
    9.6 left arrow 13.6
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 3182
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