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Samsung DDR3 8GB 1600MHz 8GB
InnoDisk Corporation 16GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs InnoDisk Corporation 16GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
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Faster reading speed, GB/s
14.9
7.7
Average value in the tests
Faster write speed, GB/s
9.6
8.2
Average value in the tests
Reasons to consider
InnoDisk Corporation 16GB
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Below the latency in the PassMark tests, ns
38
43
Around -13% lower latency
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
38
Read speed, GB/s
14.9
7.7
Write speed, GB/s
9.6
8.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2506
2163
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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