RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
14.8
Average value in the tests
Faster write speed, GB/s
2,123.3
11.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
59
Around -69% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
35
Read speed, GB/s
4,833.8
14.8
Write speed, GB/s
2,123.3
11.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2336
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-037.A00LF 4GB
Kingston 9965640-015.A00G 32GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMW64GX4M4K3600C18 16GB
Crucial Technology CT25664BA1339.M8FK 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9905663-006.A00G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
Kingston 99U5403-492.A00LF 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905625-011.A00G 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M378B5773DH0-CH9 2GB
Asgard VMA45UG-MIC1U22T2 8GB
Report a bug
×
Bug description
Source link