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Samsung M3 78T5663RZ3-CE6 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
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Below the latency in the PassMark tests, ns
60
73
Around 18% lower latency
Faster reading speed, GB/s
4
15.2
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Report a bug
Faster write speed, GB/s
9.1
2,168.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
73
Read speed, GB/s
4,595.2
15.2
Write speed, GB/s
2,168.2
9.1
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
1843
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
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Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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