RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
18.8
Average value in the tests
Faster write speed, GB/s
2,622.0
15.2
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
77
Around -196% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
26
Read speed, GB/s
3,405.2
18.8
Write speed, GB/s
2,622.0
15.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3666
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-5066C20-8GVK 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK32GX4M2C3000C16 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMU64GX4M4D3000C16 16GB
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Smart Modular SH564128FH8NZQNSCG 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M386A4G40DM1-CRC 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Kingston 9905403-061.A00LF 2GB
Jinyu 16GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston HX316C10F/4 4GB
SK Hynix HMA84GL7AMR4N-UH 32GB
Report a bug
×
Bug description
Source link