RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
19.9
Average value in the tests
Faster write speed, GB/s
2,622.0
15.9
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
77
Around -208% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
25
Read speed, GB/s
3,405.2
19.9
Write speed, GB/s
2,622.0
15.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3680
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Mushkin 991586 2GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZR 8GB
Samsung DDR3 8GB 1600MHz 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Corsair CMV4GX3M1B1600C11 4GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-3000C16-8GVSB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CM4X8GC3000C15K4 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
DSL Memory CIR-W4SUSS2408G 8GB
Samsung M391B5273CH0-CH9 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B1G73BH0-CH9 8GB
Corsair CMV4GX3M1B1600C11 4GB
Apacer Technology 76.B305G.D500B 4GB
Report a bug
×
Bug description
Source link