RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT4G4SFS8266.M8FE 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology CT4G4SFS8266.M8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Below the latency in the PassMark tests, ns
77
94
Around 18% lower latency
Faster reading speed, GB/s
3
13.2
Average value in the tests
Reasons to consider
Crucial Technology CT4G4SFS8266.M8FE 4GB
Report a bug
Faster write speed, GB/s
6.4
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
94
Read speed, GB/s
3,405.2
13.2
Write speed, GB/s
2,622.0
6.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
1390
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Samsung M393B2G70BH0-YK0 16GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK16GX4M4A2133C13 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M393A2K43BB1-CRCA1 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-3000C16-16GISB 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3000C15-8GTZR 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X16GF3200C22S2 16GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMW32GX4M2C3200C16 16GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SpecTek Incorporated PSD34G13332 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK64GX4M8X4200C19 8GB
Report a bug
×
Bug description
Source link