RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
77
Around -8% lower latency
Faster write speed, GB/s
6.4
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
71
Read speed, GB/s
3,405.2
15.6
Write speed, GB/s
2,622.0
6.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
1650
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK16GX4M2K4133C19 8GB
Samsung M3 93T5750CZA-CE6 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Apacer Technology 75.A73AA.G03 2GB
Corsair CMK8GX4M2A2666C16 4GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
PNY Electronics PNY 2GB
Kingston HP28D4S7D8HA-16X 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2133C15-4GRK 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Samsung M395T2863QZ4-CF76 1GB
Hewlett-Packard 7EH67AA# 8GB
Avant Technology F641GU67F9333G 8GB
Essencore Limited KD4AGS88C-26N1900 16GB
G Skill Intl F5-5600J4040C16G 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-2133C9-8GZH 8GB
Report a bug
×
Bug description
Source link