RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around -10% lower latency
Faster write speed, GB/s
13.9
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
30
Read speed, GB/s
17.6
17.6
Write speed, GB/s
12.0
13.9
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2910
3473
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Qimonda 72T128420EFA3SB2 1GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Apacer Technology GD2.1527WT.001 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Kingston KP4T2F-PSB 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Corsair CMD16GX3M2A1866C9 8GB
Kingston 9905624-016.A00G 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C15-8GVR 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD32GX4M4C3200C14T 8GB
Kingston 99U5474-022.A00LF 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Avant Technology F6451U64F9333G 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Kingston KP223C-ELD 2GB
Golden Empire CL16-16-16 D4-3200 4GB
Report a bug
×
Bug description
Source link