RAM comparison Samsung M378A1K43EB2-CWE 8GB vs Micron Technology M471A1K43CB1-CTD 8GB

Samsung M378A1K43EB2-CWE 8GB vs Micron Technology M471A1K43CB1-CTD 8GB

Overall score

Samsung M378A1K43EB2-CWE 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A1K43EB2-CWE 8GB

Below the latency in the PassMark tests, ns

33 38

Around 13% lower latency
Faster reading speed, GB/s

17.6 14.8

Average value in the tests
Higher memory bandwidth, mbps

25600 21300

Around 1.2% higher bandwidth

Reasons to consider
Micron Technology M471A1K43CB1-CTD 8GB

Complete list of technical specifications

Samsung M378A1K43EB2-CWE 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2910 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns