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Samsung M391B5673FH0-CH9 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M391B5673FH0-CH9 2GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences Specifications Comments

Differences

Samsung M391B5673FH0-CH9 2GB Reasons to consider
Samsung M391B5673FH0-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 52
    Around 46% lower latency
  • Faster reading speed, GB/s
    13.3 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    8.5 left arrow 7.6
    Average value in the tests
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB Reasons to consider
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5673FH0-CH9 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 52
  • Read speed, GB/s
    13.3 left arrow 10.0
  • Write speed, GB/s
    8.5 left arrow 7.6
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2213 left arrow 2169

Samsung M391B5673FH0-CH9 2GB RAM comparisons

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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